Recently, a number of third-generation semiconductor projects ushered in the latest progress. Among them, the investment funds of Tianke's third-generation semiconductor project and Shandong Heze gallium arsenide semiconductor chip project exceeded 3 billion.

With a total investment of 3.27 billion yuan, the third generation semiconductor project of Tianke was re-invested in Baoan, Shenzhen

According to Binhai Bao 'an news, on February 27, the third-generation semiconductor silicon carbide material production base was opened in Shenzhen Bao 'an District, which is constructed and operated by Shenzhen Reinvestment Tianke Semiconductor Co., LTD., which will further strengthen Shenzhen's third-generation semiconductor "virtual whole industry chain (VIDM)" and help Guangdong to build the "third pole" of national integrated circuit industry development.

Binhai Bao 'an news shows that the project began construction in November 2021, the key production area plant structure was capped in November 2022, and the substrate production line officially entered the trial operation stage in June 2023.

The third generation semiconductor silicon carbide material production base has a total investment of 3.27 billion yuan, which is a key project in Guangdong Province and Shenzhen, and a key contract project in Shenzhen Global Investment Promotion Conference. Among them, around the production of substrate and epitaxy and other basic materials for manufacturing chips, the project focuses on the layout of 6-inch silicon carbide single crystal substrate and epitaxy production line, which is expected to reach 250,000 pieces of substrate and epitaxy production capacity this year. Will effectively solve the downstream customers in rail transit, new energy vehicles, distributed new energy, smart grid, high-end power supply, 5G communication, artificial intelligence and other key areas of silicon carbide device industry chain development of raw material basic security and supply bottlenecks, for Shenzhen and Guangdong local leading enterprises long-term to provide stable and reliable sufficient amount of substrate and epitaxial materials, To accelerate the promotion of the whole industrial chain core technology autonomy and control and mass production of raw materials.

In the future, the company will also set up a large-size crystal growth and epitaxial research and development center, and cooperate with local key laboratories in the field of instrument equipment sharing and materials, strengthen technological innovation cooperation in the field of crystal processing with key equipment manufacturing enterprises, and link downstream leading enterprises in joint innovation in the research and development of vehicle gauge devices and modules. And help Shenzhen to improve the 8-inch substrate platform research and development and industrial manufacturing technology level.

3.5 billion yuan, Shandong Heze gallium arsenide semiconductor chip project started

Wudian Town, Mudan District, Heze City, news shows that on February 26, Wudian Town held the 2024 spring Wudian Town provincial key project construction site promotion meeting and gallium arsenide semiconductor chip project groundbreaking ceremony.

It is reported that the GaAs semiconductor project in Peony District of Heze City is jointly invested and constructed by Shandong Shuifa and Taiwan semiconductor leading enterprises, with a total investment of 3.5 billion yuan and is planned to be implemented in two phases. The first phase of the project plans to invest 1.5 billion yuan to build a 4/6-inch gallium arsenide production line, which mainly produces gallium arsenide semiconductor surface laser VCSEL products with an annual output of 60,000 chips. The construction period is 1.5 years, and trial production is expected in July 2025.

The second phase of the project plans to invest 2 billion yuan to build 4/6-inch third-generation compound semiconductor gallium nitride GaN and silicon carbide SiC production lines, which mainly produce power semiconductor devices and high-voltage new energy vehicle inverters to meet diversified market demand. The second phase of the project is scheduled to start construction in the second half of 2026 and is expected to be put into operation in the first half of 2028.

Spectral optical crystal 100 million yuan SiC chip project signed in Zhejiang

Recently, Guali Town, Xiaoshan District, Hangzhou City, Zhejiang Province, held a signing conference to promote new industrialization and project commencement, at which the total investment of 18 projects signed to start exceeded 2 billion yuan, involving semiconductor chips, integrated circuit design and components. Among them, the newly signed projects include the production base project with an annual output of 100,000 third-generation semiconductor chips and systems invested by spectral optical Crystal, and the total investment of the project is 100 million yuan.

It is reported that spectral optical crystal mainly produces drive systems and modules based on third-generation semiconductor materials such as silicon carbide (SiC), which are used in areas with ultra-high reliability requirements such as electric vehicle electronic control modules. The company has optimization and production capabilities from the chip level to the module level to the system level. As previously reported, since its establishment in 2020, the annual revenue growth rate of spectral analysis crystal has been more than 300%, the company has achieved revenue of 80 million yuan in 2023, the order in hand is 300 million yuan, the revenue is expected to exceed 200 million yuan in 2024, and the company plans to declare IPO in 2025.

In terms of products, Spectral optical crystal has mass-produced several high-end SiC SBD and car-gauge MOS chips within 1200V and 30 milliohm. In terms of business, on September 25, 2023, spectral optical crystal, dry crystal semiconductor and Green Energy core signed a strategic cooperation agreement to jointly develop and verify SiC related products applied to special fields, and signed an intention to order 450 million yuan within 5 years. With the completion of this project, the production capacity of spectral optical crystal SiC chip is expected to rise to a higher level.

1.47 billion, Saida Semiconductor annual output of 300,000 SiC epitaxy project started

Recently, Saida Semiconductor Technology Co., LTD. (hereinafter referred to as Saida Semiconductor) silicon carbide (SiC) epitaxial project environmental assessment information publicity.

The announcement shows that the total investment of the project is about 1.47 billion yuan, covers an area of 11979m square meters, the total construction area of 7887m square meters, will lease the original plant and open space of Great Wall Motor Xushui Branch (ECCOM plant), the formation of the company's production and research and development plant. The project plans to purchase main production, research and development and ancillary equipment such as epitaxial equipment, test equipment and cleaning equipment, with an initial production capacity of 15,000 pieces/year and a planned production capacity of 300,000 pieces/year in 2027.

According to Tian Eye check data, Saida Semiconductor was established in October 2023 and is wholly owned by Wensheng Technology (Tianjin) Co., LTD., whose controlling shareholder and actual controller is Wei Jianjun, chairman of Great Wall Motor.

As early as May 2023, the bidding center of the Great Wall Holdings issued a document saying that it had launched the "Seiko Automation SiC epitaxial plant renovation design project"; In September 2023, the project settled in the Xushui Economic Development District, Baoding City, Hebei Province. The contracting party was Wensheng Technology (Tianjin) Co., LTD., and the main construction party was Seda Semiconductor.

With a total investment of 2 billion yuan, Xinhua Jin third generation semiconductor carbon material Industrial Park project settled in Shandong

On February 21, Pingdu City, Shandong Province held the 2024 key industrial project spring concentrated signing activities, 48 projects concentrated signing, including Xinhua Jin third generation semiconductor carbon materials Industrial Park project.

It is understood that Xinhua Jin third-generation semiconductor carbon materials Industrial Park project is located in Pingdou Economic Development Zone, the project is invested by Xinhua Jin Group, with a total investment of 2 billion yuan, the main construction of an annual output of 5,000 tons of fine particle isostatic pressed graphite for semiconductor and 1,000 tons of porous graphite for semiconductor production base. Qingdao is one of the main producing areas of domestic graphite resources. According to the official information of Xinhua Jin Group, the Group acquired two graphite mines in Pingdu. In recent years, the group has worked with the Chinese Academy of Sciences Shanxi Institute of Coal and Chemical Engineering to build high-performance isostatic pressed graphite and special porous graphite projects. The products produced are the core basic graphite materials for the third generation semiconductor silicon carbide long crystal, which have been certified by the authoritative department of the National Graphite Product Quality Inspection Center, surpassing the imported products in terms of technical level and product performance.

It is understood that Xinhua Jin Group is an industrialization, internationalization and comprehensive enterprise group formed by Xinhua Jin Group Co., Ltd. and a number of provincial foreign trade enterprises in accordance with the Shandong provincial government's strategic deployment of "promoting the reform and reorganization of provincial foreign trade enterprises".

Graphite new material sector is one of the key business sectors of Xinhua Jin Group. In addition to the above projects, in November 2023, Qingdao Huajin New Materials Technology Development Co., LTD. (hereinafter referred to as "Huajin New Materials"), a subsidiary of Xinhua Jin Group, officially ignited and put into operation. The project mainly produces special graphite materials for third-generation semiconductor chips, clearing basic raw material obstacles for the development of domestic downstream SiC semiconductor industry.

Huajin New Materials is a technology conversion enterprise of Xinhua Jin Group and Shanxi Institute of Coal and Chemical Engineering of Chinese Academy of Sciences, specializing in the production of large size, fine particle special graphite materials products, product performance indicators are leading in China, mainly used in the third generation of semiconductor SiC substrate hot field, 3D hot bending mold.

Recently, Xinhua Jin said in the investor question and answer platform, the company will focus on and resources for graphite new material industry layout, internal through independent research and development, technological innovation to improve the added value of graphite products, to create a first-class graphite refining production base; Externally, we will take graphite ore as a starting point, actively explore and layout the application of graphite in the field of new materials to the downstream, carry out technical cooperation and exchanges with scientific research institutions and professional colleges, and cooperate with the controlling shareholder Xinhua Jin Group in the development of new graphite materials business, and establish a multi-level graphite product system through epitaxial mergers and acquisitions.

240,000 tablets! Pershing Electronics 6-inch SiC epitaxial wafer project started

On February 26, Hebei Puxing Electronic Technology Co., LTD. (hereinafter referred to as "Puxing Electronics") official website information shows that the company's "6-inch low-density defect silicon carbide epitaxial film industrialization project" carried out the first environmental impact assessment information publicity (hereinafter referred to as announcement).

The announcement shows that the total investment of this project is 350,701,600 yuan, the use of the company's 1# plant for reconstruction and expansion, construction area of about 4,000 square meters, the purchase of silicon carbide (SiC) epitaxy equipment and supporting equipment 116 (sets) to form a 6-inch low-density defect SiC epitaxy material production line. After the completion of the project, the annual production capacity of 240,000 SiC epitaxial sheets will be achieved.

According to the official website of Puxing Electronics, the company was founded in November 2000, committed to the epitaxial research and development and production of high-performance semiconductor materials, is a holding subsidiary of CEC Semiconductor Materials Co., LTD. (hereinafter referred to as CEC Materials). The main products of Puxing Electronics are silicon-based epitaxial wafers, gallium nitride (GaN) and SiC epitaxial wafers of various sizes and models, which can be widely used in clean energy, new energy vehicles, aerospace, automobiles, computers, tablets, smart phones, home appliances and other fields.

In recent years, Puxing Electronics, a subsidiary of electrical Materials, has actively laid out the research and development and production of third-generation semiconductor epitaxy materials, launched the construction project of a new epitaxy material industry base covering an area of 130 acres in September 2021, completed the main plant capping in April 2022, moved into the first batch of production and inspection equipment in September, and achieved the first silicon epitaxy and SiC epitaxy offline in November. It marks that the industrial base has officially entered the trial production and verification stage.

It is reported that in April 2022, Puxing Electronics also announced a "6-inch silicon carbide epitaxial sheet industrialization project", the total investment of this project is 180 million yuan, renting the existing plant of Tonghui Company (affiliated to the 13th Institute of CLP), purchasing 15 sets of SiC epitaxial furnace and supporting testing instruments, etc., and completing a 6-inch SiC epitaxial sheet batch production line. To achieve an annual production capacity of 60,000 6-inch SiC epitaxial sheets.

With the implementation of the industrialization project of 6-inch low-density defect SiC epitaxial sheet, the production capacity of 6-inch SiC epitaxial sheet of Puxing Electronics will be greatly improved, helping the company to further deepen the layout of the third-generation semiconductor epitaxial material field.

The 8-inch SiC and GaN wafer fab project was contracted in Fujian

On February 20, in the main venue of Fuzhou Sustainable Development and Entrepreneur Conference and the Changle branch venue, Changle District signed 16 major projects, one of which was the Tianrui Semiconductor project.

According to the data, Fujian Tianrui Semiconductor Co., Ltd. was established in February 2023, with a registered capital of 5 billion yuan, and its business scope includes electronic components manufacturing, wholesale, and power electronic components sales; Electronic components and electromechanical components equipment manufacturing, sales, etc.

It is reported that the Tianrui Semiconductor project will build 8-inch silicon carbide (SiC) and gallium nitride (GaN) fabs, and lay out the whole industrial chain of third-generation semiconductor substrate epitaxy, wafer manufacturing, device design, system application and related equipment production through industrial mergers and acquisitions and new projects. After the project is implemented, it will bring advanced SiC, GaN and other fields of production and research and development experience to Fuzhou, and build a hundred-billion-level third-generation semiconductor industrial cluster.

It is worth mentioning that Fuzhou has recently signed two new GaN projects, with a total investment of more than 1 billion yuan. One of them is the GaN wafer fab project of Xinrui Semiconductor, which is built by Fujian Xinrui Semiconductor Co., LTD. Founded in December 2023, with a registered capital of 5 billion yuan, Xinrui Semiconductor's business scope includes wholesale of electronic components, sales of power electronic components, sales of electronic components and electromechanical components equipment, manufacturing of electronic components and electromechanical components equipment, and manufacturing of electronic components.

The other project is Fuzhou Gallium Valley GaN epitaxy Chip project, which is constructed by Fuzhou Gallium Valley Semiconductor Co., LTD., mainly engaged in the research and development and production of third-generation semiconductors. It is expected to invest 1 billion yuan, land area of 86 mu, and annual production capacity of 240,000 pieces after production. Founded in July 2022, Gallium Valley Semiconductor is committed to the development and production of third-generation semiconductor materials GaN epitaxy, including silicon-based gallium nitride (GaN on Si), silicon-based Gallium nitride (GaN on SiC), and Sapphire based gallium nitride (GaN on Sapphire), which are mainly used in power electronics and power devices.